Memory cell using Modified Field Effect Diode-Reference-Cited by-同舟云学术

Memory cell using Modified Field Effect Diode

Published:2009 Issue:22 Volume:6 Page:1582-1586
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

Amirmazlaghani Mina¹,Raissi Farshid¹

Affiliation:

1. K. N. Toosi University of Technology, Electrical Engineering Department

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://www.jstage.jst.go.jp/article/elex/6/22/6_22_1582/_pdf

Reference5 articles.

1. [1] I. Sheikhian and F. Raissi, “Nano-scale transistor device with large current handling capability, ” European Patent, #EP 1 965 437 A1, Sept. 2007.

2. [2] I. Sheikhian and F. Raissi, “High-speed Digital family using Field Effect Diode, ” Electron. Lett., vol. 39, no. 4, 2003.

3. Simulation Results for Nanoscale Field Effect Diode

4. [4] A. S. Sedra and K. C. Smith, “Microelectronic Circuits, ” Oxford University Press, 1998.

5. [5] M. M. Mano, “Digital Design, ” Prentice Hall PTR, 2001.

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