High-Pulsed-Power (49W) Vertical-Cavity Surface-Emitting Laser with Five Quantum Wells by Uniform Current Injection into Large Emitting Area

Author:

Otake Nobuyuki1,Kojima Eiji1,Yamada Hitoshi1,Takeuchi Yukihiro1

Affiliation:

1. DENSO Corporation, Research Laboratories

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. [1] N. Otake, E. Kojima, H. Yamada, and Y. Takeuchi, “High-power large bottom-emitting VCSEL by uniform current injection,” to be published in IEICE.

2. [2] D. Francis, H. L. Chen, W. Yuen, G. Li, and C. Chang-Hansnain, “Monolithic 2D-VCSEL array with > 2W CW and > 5W pulsed output power,” Electron. Lett., vol. 34, no. 22, pp. 2132-2133, Oct. 1988.

3. [3] M. Miller, M. Grabherr, R. Jager, and K. J. Ebeling, “High-Power VCSEL Arrays for Emission in the Watt Regime at room Temperature,” IEEE Photon. Techol. Lett., vol. 3, no. 3, pp. 173-175, March 2001.

4. [4] T. Li, Y. Ning, Y. Sun, C. Wang, J. Liu, Y. Liu, and L. Wang, “High-power InGaAs VCSEL's single devices and 2-D arrays,” J. Lumin., vol. 122, pp. 571-573, Jan.-April 2007.

5. A high power InGaAs/GaAsP vertical-cavity surface-emitting laser and its temperature characteristics

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