Selection of amplifier for optimized charge transfer in active pixel CMOS time of flight (TOF) image sensors-Reference-Cited by-同舟云学术

Selection of amplifier for optimized charge transfer in active pixel CMOS time of flight (TOF) image sensors

Published:2011 Issue:22 Volume:8 Page:1913-1919
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

Halin Izhal Abdul¹,Din Amad ud¹,Aris Ishaq b.¹,Isa Maryam bt. Mohd¹,Shafie Suhaidi¹,Kawahito Shoji²

Affiliation:

1. Department of Electrical and Electronics Engineering, Universiti Putra Malaysia, Faculty of Engineering

2. Advanced Imaging Devices Laboratory, Research Institute of Electronics, Shizuoka University

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://www.jstage.jst.go.jp/article/elex/8/22/8_22_1913/_pdf

Reference10 articles.

1. [1] I. A. Halin and S. Kawahito, “Design of a charge domain CMOS Time-of-Flight range image sensor,” IEICE Trans. Electron., vol. E87-C, no. 11, pp. 1889-1896, Nov. 2004.

2. [2] A. Ullrich, N. Studnicka, J. Rirgl, and S. Orlandini, “Long-range high-performance Time-of-Flight 3D imaging Sensors,” Proceeding of the first international symposium on 3D data processing and visualization and transmission, vol. 852-855, Nov. 2002.

3. [3] F. Leonardi, D. Covi, D. Petri, and D. Stoppa, “Accuracy Performance of a Time-of-Flight CMOS Range Image Sensor System,” IEEE Trans. Instrum. Meas., vol. 58, no. 5, May 2009.

4. [4] J. Ohta, Smart CMOS image sensors and applications, New York, Taylor & Francis Group, 2008.

5. A CMOS Time-of-Flight Range Image Sensor With Gates-on-Field-Oxide Structure

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