Low temperature formation of .BETA.-FeSi2 polycrystalline microstructure by pulsed laser deposition and thermal annealing
Author:
Affiliation:
1. Department of Electronic Systems Engineering, Tokyo Metropolitan Institute of Technology
2. Department of Electronic Engineering, School of Engineering, The University of Tokyo
3. National Institute of Information and Communications Technology
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://www.jstage.jst.go.jp/article/elex/1/9/1_9_253/_pdf
Reference8 articles.
1. On the origin of the 1.5 μm luminescence in ion beam synthesized β‐FeSi2
2. Optimum annealing condition for photoluminescence from β-FeSi2 balls grown by reactive deposition epitaxy and embedded in Si crystal
3. [3] M. Kishi, T. Igarashi, M. Tsuchiya, J. Katayose, M. Ouchi, and H. Sugawara, “Low temperature formation of beta-FeSi2 droplets based on pulsed laser deposition, ” The 8th IUMRS Intern. Conf. on Advanced Materials, Yokohama, Japan, C7-12-15, p. 17, Oct. 2003.
4. Elimination of droplets using a vane velocity filter for pulsed laser ablation of FeSi2
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1. IR laser photodeposition of a-Fe/Si films developing nanograins of ferrisilicate, iron disilicide and rare hexagonal iron upon annealing;Dalton Trans.;2012
2. Facing target sputtered iron-silicide thin film;Thin Solid Films;2007-08
3. Crystallization of β-FeSi2 droplets on silicon substrates by room-temperature pulsed laser deposition;Thin Solid Films;2007-08
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