1. [1] I. Hassoune and I. O'Connor, “Double-gate MOSFET based reconfigurable cells,” Electron. Lett., vol.43, no.23, pp.1273-1274, 2007.
2. [2] I. O'Connor, J. Liu, F. Gaffiot, F. Pregaldiny, C. Lallement, C. Maneux, J. Goguet, S. Fregonese, T. Zimmer, L. Anghel, T.-T. Dang, and R. Leveugle, “CNTFET modeling and reconfigurable logic-circuit design,” IEEE Trans. Circuits Syst. I, Regular Papers, vol.54, no.11, pp.2365-2379, Nov. 2007.
3. [3] K. Jabeur, N. Yakymets, I. O'Connor, and S. Le Beux, “Fine-grain reconfigurable logic cells based on double-gate CNTFETs,” Proc. ACM GLSVLSI'11, pp.19-24, 2011.
4. [4] M. Kobayashi, H. Ninomiya, and S. Watanabe, “Circuit design of reconfigurable logic based on double-gate CNTFETs,” IEICE Trans. Fundamentals, vol.E96-A, no.7, pp.1642-1644, July 2013.
5. [5] T. Hayashi and Y. Watanabe, “Circuit design of reconfigurable logic based on MOS double gate/carbon nano tube transistor,” IEICE Trans. Electron. (Japanese Edition), vol.J93-C, no.12, pp.674-675, Dec. 2010.