A digitally programmable active resistor in CMOS technology-Reference-Cited by-同舟云学术

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A digitally programmable active resistor in CMOS technology

Published:2015 Issue:8 Volume:12 Page:20150247-20150247
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

López-Delgadillo Edgar¹,Díaz-Méndez José A.²,Gurrola-Navarro Marco A.³,García-Andrade Miguel A.⁴,Vázquez-Medina Rubén⁵

Affiliation:

1. Electronics Systems Department, Universidad Autónoma de Aguascalientes

2. Electronics Department, National Institute for Astrophysics, Optics and Electronics

3. Electronics Department, CUCEI, Universidad de Guadalajara

4. Electronics Department, Universidad Autónoma de Baja California

5. ESIME Culhuacan Graduate School, Instituto Politécnico Nacional

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/elex/12/8/12_12.20150247/_pdf

Reference15 articles.

1. [1] G. Wilson and P. K. Chan: Electron. Lett. 29 (1993) 306. DOI:10.1049/el:19930209

2. [2] K. Dejhan, N. Suwanchatree, P. Prommee, S. Piangprantong and I. Chaisayun: ISCIT (2004) 124. DOI:10.1109/ISCIT.2004.1412463

3. [3] P. Prommee, L. Yuttasukprasert, M. Somdulyakanok and K. Dejhan: IEEE TENCON (2004) 298. DOI:10.1109/TENCON.2004.1414928

4. [4] G. Wilson and P. K. Chan: Electron. Lett. 25 (1989) 1725. DOI:10.1049/el:19891154

5. [5] N. Tadic and D. Gobovic: IEEE Trans. Instrum. Meas. 50 (2001) 1704. DOI:10.1109/19.982971

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