A novel S-band high linear passive mixer with an integrated driver amplifier
Author:
Affiliation:
1. Institute of Microelectronics, Chinese Academy of Sciences
2. University of Chinese Academy of Sciences
3. Beijing Key Laboratory of New Generation Communication RF Technology
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://www.jstage.jst.go.jp/article/elex/20/12/20_20.20230194/_pdf
Reference37 articles.
1. [1] T. Nguyen, et al.: “Development of a double-octave (7-34GHz), highly linear single balanced resistive HEMT mixer using device linearization techniques,” 2016 IEEE MTT-S International Microwave Symposium (2016) 1 (DOI: 10.1109/MWSYM.2016.7538834).
2. [2] M.S. Clements, et al.: “Comparison of highly linear resistive mixers in depletion and enhancement mode GaAs and GaN pHEMTs at Ka band,” 2018 IEEE MTT-S International Microwave Symposium (2018) 435 (DOI: 10.1109/mwsym.2018.8439537).
3. [3] T.T. Nguyen, et al.: “Development of wideband and high IIP3 millimeter-wave mixers,” IEEE Trans. Microw. Theory Techn. (2017) 3071 (DOI: 10.1109/TMTT.2017.2669042).
4. [4] H. Ying, et al.: “A highly linear short-wave broadband double-balanced mixer,” 2014 15th International Conference on Electronic Packaging Technology (2014) 1278 (DOI: 10.1109/icept.2014.6922877).
5. [5] U.L. Rohde, et al.: “Low cost, power-efficient reconfigurable passive FET mixers,” 2007 Canadian Conference on Electrical and Computer Engineering (2007) 385 (DOI: 10.1109/CCECE.2007.102).
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