Affiliation:
1. Institute of Microelectronics of Chinese Academy of Sciences
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference33 articles.
1. [1] A.C. Bodoh and A.A. Sakib: “Comparative analysis of CNTFET and CMOS based NCL asynchronous circuits: a study of scaling trends,” 2022 IEEE 13th Annual Ubiquitous Computing, Electronics & Mobile Communication Conference (UEMCON) (2022) 0407 (DOI: 10.1109/UEMCON54665.2022.9965723).
2. [2] Y. Chen, et al.: “An ultralow-power 65-nm standard cell library for near/subthreshold digital circuits,” IEEE Trans. Very Large Scale Integr. (VLSI) Syst. 30 (2022) 676 (DOI: 10.1109/TVLSI.2022.3151500).
3. [3] S.S. Ghoreishi, et al.: “Low-power ultradeep-submicrometer junctionless carbon nanotube field-effect diode,” IEEE Trans. Electron Devices 69 (2022) 400 (DOI: 10.1109/TED.2021.3131110).
4. [4] L. Gomez, et al.: “Electron transport in strained-silicon directly on insulator ultrathin-body n-MOSFETs with body thickness ranging from 2 to 25nm,” IEEE Electron Device Lett. 28 (2007) 285 (DOI: 10.1109/LED.2007.891795).
5. [5] K. Uchida, et al.: “Experimental study on carrier transport mechanisms in double- and single-gate ultrathin-body MOSFETs--Coulomb scattering, volume inversion, and /spl delta/T/sub SOI/-induced scattering,” IEEE International Electron Devices Meeting (2003) 33.5.1 (DOI: 10.1109/IEDM.2003.1269402).