Abstract
Admittance measurements including capacitance (C) and conductance (G) of Al/Gr-PVA/p-Si (MPS) device were made at 500 kHz and under dark and 200 mW/cm2 conditions. The illumination response on the electric characteristics of the device was investigated using the C-2-V characteristics. It was observed that the electronic parameters of the device changed depending on the illumination conditions. The doping concentration, Fermi energy and barrier height were obtained using the C-2-V data. The surface state (Nss) was also obtained using capacitance data. The results show that the device can be used as a photocapacitor.