Analysis of Series Resistance's (RS) Impact on Ag/Perylene/n-Si Schottky Barrier Diode (SBD) in Various Techniques

Abstract

The purpose of this research is to experimentally examine how Rs affects the I-V curves of Ag/Perylene/n-Si SBD. Various plots of the experimental I-V measurements with the forward voltage are wielded in order to determine the parameter Rs. The I-V properties of Ag/Perylene/n-Si SBD was evaluated at room temperature (RT) based on Thermionic-Emission (TE) model. We specified the Rs values using Ohm law, Cheungs’, and modified Norde functions. We compared the Rs values utilized various techniques. Modified Norde functions apply to the ln I-V graph's all forward voltage region. On the other hand, Cheung's approaches are just feasible in the non-linear section in the high voltage region. The Rs values obtained from various techniques are distinct and are dedicated in the table. The reason for this inconsistency is shown in our research. It is evident that the values of the Rs determined using various approaches are in good accordance with one another. The Ohm's law derived from sufficiently high forward voltages is the one among them that is the most straightforward, precise, and dependable. It was demonstrated by the I-V data that the dispersion of Rs is a key factor affecting the electrical properties of diodes.