Effect of Annealing and Doping Process of the Zn1-xTixO Films

Abstract

In this study, undoped and Ti-doped ZnO thin films grown by SILAR (Successive Ionic Layer Adsorption and Reaction) method were investigated using XRD, SEM, linear absorbance and electrical characterization. The effect of doping ratio was determined changing Ti ratios from 0.05 to 0.20. In addition, the films with the same additive ratio were annealed at 300°C for 15 minutes in nitrogen environment. Thus, the effects of both annealing and doping ratio on the thin films produced were examined in detail. When the current-voltage graphs are examined, it is observed that there is a decrease in the resistance values with doping. The best additive effect was observed for Zn0.90Ti0.10O film and the structures formed after this additive ratio returned to their initial morphology.