Review of technologies for high-voltage integrated circuits
Author:
Publisher
Tsinghua University Press
Subject
Multidisciplinary
Link
http://xplorestaging.ieee.org/ielx7/5971803/9614063/09614070.pdf?arnumber=9614070
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Influence of Structure Parameters on the RoN, sp of Quasi- Vertical Power DMOS Compatible with 0.18μm BCD Process;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02
2. Novel Grid-Gate 16V-nLDMOS with a Low Specific On-Resistance of 4.7mΩ.mm2Based on A Standard 0.18μm BCD Platform;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02
3. A Split-Gate Power MOSFET Obtaining Ultra-Wide SOA Based on Time-Shared and Partitioned Conduction Gate Control;IEEE Journal of Emerging and Selected Topics in Power Electronics;2024-04
4. Means to Accelerate Transfer of Information Between Integrated Circuits;Machine Learning-based Design and Optimization of High-Speed Circuits;2023-12-31
5. An RC-LIGBT With Dual Self-Driving nMOS For Enhancing Short Circuit Property and Modulating Electron Injection;IEEE Transactions on Electron Devices;2023-12
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