Rapid default transition of CD4 T cell effectors to functional memory cells

Author:

McKinstry K. Kai1,Golech Susanne2,Lee Won-Ha2,Huston Gail1,Weng Nan-Ping2,Swain Susan L.1

Affiliation:

1. Trudeau Institute, Saranac Lake, NY 12983

2. National Institute on Aging, National Institutes of Health, Baltimore, MD 21224

Abstract

The majority of highly activated CD4 T cell effectors die after antigen clearance, but a small number revert to a resting state, becoming memory cells with unique functional attributes. It is currently unclear when after antigen clearance effectors return to rest and acquire important memory properties. We follow well-defined cohorts of CD4 T cells through the effector-to-memory transition by analyzing phenotype, important functional properties, and gene expression profiles. We find that the transition from effector to memory is rapid in that effectors rested for only 3 d closely resemble canonical memory cells rested for 60 d or longer in the absence of antigen. This is true for both Th1 and Th2 lineages, and occurs whether CD4 T cell effectors rest in vivo or in vitro, suggesting a default pathway. We find that the effector–memory transition at the level of gene expression occurs in two stages: a rapid loss of expression of a myriad of effector-associated genes, and a more gradual gain of expression of a cohort of genes uniquely associated with memory cells rested for extended periods.

Publisher

Rockefeller University Press

Subject

Immunology,Immunology and Allergy

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