Spin-Polarized Band Structure at MoTe<sub>2</sub>/Bi<sub>2</sub>Se<sub>3</sub> Interface Designed from First Principles-Reference-Cited by-同舟云学术

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Spin-Polarized Band Structure at MoTe₂/Bi₂Se₃ Interface Designed from First Principles

Published:2022-04-15 Issue:4 Volume:91 Page:
ISSN:0031-9015
Container-title:Journal of the Physical Society of Japan
language:en
Short-container-title:J. Phys. Soc. Jpn.

Author:

Yamauchi Kunihiko¹²^ORCID,Shimazu Ryoma¹,Oguchi Tamio¹³^ORCID

Affiliation:

1. Institute of Scientific and Industrial Research (ISIR-SANKEN), Osaka University, Ibaraki, Osaka 567-0047, Japan

2. Elements Strategy Initiative for Catalysts and Batteries (ESICB), Kyoto University, Kyoto 615-8245, Japan

3. Center for Spintronics Research Network, Osaka University, Toyonaka, Osaka 560-8531, Japan

Funder

Japan Society for the Promotion of Science

Core Research for Evolutional Science and Technology

Publisher

Physical Society of Japan

Subject

General Physics and Astronomy

Link

https://journals.jps.jp/doi/pdf/10.7566/JPSJ.91.044705

Reference33 articles.

1. Spintronics, from giant magnetoresistance to magnetic skyrmions and topological insulators

2. Spin-Orbitronics at Transition Metal Interfaces

3. Modulation of Dirac electrons in epitaxial Bi2Se3 ultrathin films on van der Waals ferromagnet Cr2Si2Te6

4. Conversion of a conventional superconductor into a topological superconductor by topological proximity effect

5. Interface effects at a half-metal/ferroelectric junction

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1. Modulation of electronic and optical properties of Bi2Se3/MoTe2 heterostructure by vertical strain and external electric field;Materials Today Communications;2024-06

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