Electronic State of CeFe4As12 Investigated by Using Single Crystals Grown under High Pressure of 4 GPa-Reference-Cited by-同舟云学术

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Electronic State of CeFe4As12 Investigated by Using Single Crystals Grown under High Pressure of 4 GPa

Published:2014-03-15 Issue:3 Volume:83 Page:034710
ISSN:0031-9015
Container-title:Journal of the Physical Society of Japan
language:en
Short-container-title:J. Phys. Soc. Jpn.

Author:

Ogawa Yoshinori¹,Sato Hideyuki¹,Watanabe Makoto¹,Namiki Takahiro¹²,Tatsuoka Sho¹,Higashinaka Ryuji¹,Aoki Yuji¹,Kuwahara Keitaro³,Yamaura Jun-Ichi⁴,Hiroi Zenji⁴

Affiliation:

1. Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan

2. Graduate School of Science and Engineering, University of Toyama, Toyama 930-8555, Japan

3. Institute of Applied Beam Science, Ibaraki University, Mito 310-8512, Japan

4. Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan

Publisher

Physical Society of Japan

Subject

General Physics and Astronomy

Link

https://journals.jps.jp/doi/pdf/10.7566/JPSJ.83.034710

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