Fabrication of Se-doped PtBi<sub>2</sub> Thin Film Devices-Reference-Cited by-同舟云学术

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Fabrication of Se-doped PtBi₂ Thin Film Devices

Published:2023-05-22 Issue: Volume: Page:
ISSN:
Container-title:Proceedings of the 29th International Conference on Low Temperature Physics (LT29)
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Author:

Maeda Masaki¹,Tokuda Masashi¹,Nakamura Ryoya¹,Watanabe Mori¹,Takaki Kensuke¹,Jiang Nan¹²³,Kudo Kazutaka¹,Niimi Yasuhiro¹²³

Affiliation:

1. Department of Physics, Graduate School of Science, Osaka University, Toyonaka, Osaka 560-0043, Japan

2. Center for Spintronics Research Network, Osaka University, Toyonaka, Osaka 560-8531, Japan

3. Institute for Open and Transdisciplinary Research Initiatives, Osaka University, Suita, Osaka 565-0871, Japan

Publisher

Journal of the Physical Society of Japan

Link

https://journals.jps.jp/doi/pdf/10.7566/JPSCP.38.011036

Reference27 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Two-dimensional gas of massless Dirac fermions in graphene

3. Experimental observation of the quantum Hall effect and Berry's phase in graphene

4. Two-dimensional atomic crystals

5. Superconducting Dome in a Gate-Tuned Band Insulator

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