Crystal Growth and Physical Properties of GdOs<sub>2</sub>Si<sub>2</sub>-Reference-Cited by-同舟云学术

Crystal Growth and Physical Properties of GdOs₂Si₂

Published:2023-05-22 Issue: Volume: Page:
ISSN:
Container-title:Proceedings of the 29th International Conference on Low Temperature Physics (LT29)
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Author:

Hayashi Hiroaki¹²,Yoshida Hiroyuki K.³,Sakurai Hiroya⁴,Kikugawa Naoki⁴,Yamaura Kazunari¹²

Affiliation:

1. International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan

2. Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo 060-8628, Japan

3. Department of Physics, Faculty of Science, Hokkaido University, Sapporo 060-0810, Japan

4. Center for Green Research on Energy and Environmental Materials, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan

Publisher

Journal of the Physical Society of Japan

Link

https://journals.jps.jp/doi/pdf/10.7566/JPSCP.38.011103

Reference17 articles.

1. Superconductivity in the Presence of Strong Pauli Paramagnetism: CeCu2Si2

2. Transport properties of LaCu2Si2 and CeCu2Si2 between 1.5K and 300K

3. Novel Quantum Criticality inCeRu2Si2near Absolute Zero Observed by Thermal Expansion and Magnetostriction

4. Magnetically mediated superconductivity in heavy fermion compounds

5. Emergence of superconductivity in the canonical heavy-electron metal YbRh 2 Si 2

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1. Exploring the Magnetic Phase Diagram and Hall Resistivity Suppression in Centrosymmetric GdOs₂Si₂ Single Crystal;Journal of the Physical Society of Japan;2024-09-15