Anisotropic Thermopower of the Antiferromagnetic Kondo Semiconductor CeOs2Al10Doped with 5dElectrons and Holes
Author:
Affiliation:
1. Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
2. Institute for Advanced Materials Research, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
Publisher
Physical Society of Japan
Subject
General Physics and Astronomy
Link
http://journals.jps.jp/doi/pdf/10.7566/JPSJ.84.084705
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Point-contact spectroscopy on antiferromagnetic Kondo semiconductors CeT2Al10 (T = Ru and Os)*;Chinese Physics B;2020-06-01
2. Interplay between hybridisation gaps and unusual magnetic orders in Kondo semiconductors CeT2Al10 (T = Ru and Os);Philosophical Magazine;2019-07-31
3. Different Variations of Néel Temperature TN and Kondo Temperature TK in the Alloy System Ce(Ru1−xOsx)2Al10 under Uniaxial Pressure;Journal of the Physical Society of Japan;2018-05-15
4. Tuning the hybridization and magnetic ground state of electron and hole doped CeOs2Al10 : An x-ray spectroscopy study;Physical Review B;2018-04-04
5. Interplay between hybridization gaps and antiferromagnetic gap in the hole-doped Kondo semiconductor Ce(Os1-yRey)2Al10;Journal of Physics: Conference Series;2017-04-06
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