A New Aspect of the Charged Domain Wall in Hexagonal RMnO3 Systems (R: Y, In)-Reference-Cited by-同舟云学术

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A New Aspect of the Charged Domain Wall in Hexagonal RMnO3 Systems (R: Y, In)

Published:2019-12-15 Issue:12 Volume:88 Page:124603
ISSN:0031-9015
Container-title:Journal of the Physical Society of Japan
language:en
Short-container-title:J. Phys. Soc. Jpn.

Author:

Mori Shigeo¹,Ishizuka Hiroaki²,Cheong Sang-Wook³,Nagaosa Naoto²⁴,Yamada Yasusada⁵

Affiliation:

1. Department of Materials Science, Osaka Prefecture University, Sakai, Osaka 599-8531, Japan

2. Department of Applied Physics, University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

3. Rutgers Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, U.S.A.

4. RIKEN Center for Emergent Matter Sciences (CEMS), Wako, Saitama 351-0198, Japan

5. Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan

Publisher

Physical Society of Japan

Subject

General Physics and Astronomy

Link

https://journals.jps.jp/doi/pdf/10.7566/JPSJ.88.124603

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ab Initio Study of Structural, Electronic, Magnetic and Magnetoelastic Properties of the Magnetoelectric h-YMnO3 Semiconductor;Journal of Electronic Materials;2020-11-16

2. Re-entrant spin-glass behavior induced by co-doping in hexagonal Y0.3Lu0.7MnO3 single crystal;Journal of Alloys and Compounds;2020-10

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