Characteristics of Multi-photon Absorption in a β-Ga2O3 Single Crystal
Author:
Affiliation:
1. Department of Applied Physics and Electronics, Graduate School of Engineering, Osaka City University, Osaka 558-8585, Japan
Publisher
Japan Society of Applied Physics
Subject
General Physics and Astronomy
Link
https://journals.jps.jp/doi/pdf/10.7566/JPSJ.88.113701
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Dispersion of two-photon absorption and nonlinear refraction in β -Ga2O3 from 350 to 515 nm;Applied Physics Letters;2024-04-08
2. Metal-Semiconductor-Metal Photodetectors Based on ?-MgGaO Thin Films;ACS APPL ELECTRON MA;2023
3. Observation of nanopipes in edge-defined film-fed grown β-Ga2O3 substrate and their effect on homoepitaxial surface hillocks;Japanese Journal of Applied Physics;2023-03-31
4. Metal–Semiconductor–Metal Photodetectors Based on β-MgGaO Thin Films;ACS Applied Electronic Materials;2023-03-22
5. Three-photon absorption and Kerr nonlinearity in pristine and doped β-Ga2O3 single crystals;Applied Physics Letters;2022-01-17
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