Single Crystal Growth and Transport Properties of van der Waals Materials ABTe4 (A/B = Ti, Zr, Hf)-Reference-Cited by-同舟云学术

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Single Crystal Growth and Transport Properties of van der Waals Materials ABTe₄ (A/B = Ti, Zr, Hf)

Published:2024-01-15 Issue:1 Volume:93 Page:
ISSN:0031-9015
Container-title:Journal of the Physical Society of Japan
language:en
Short-container-title:J. Phys. Soc. Jpn.

Author:

Hasuo Yuto¹^ORCID,Urata Takahiro¹^ORCID,Araidai Masaaki¹²^ORCID,Tsuchiya Yuji³^ORCID,Awaji Satoshi³^ORCID,Ikuta Hiroshi¹⁴^ORCID

Affiliation:

1. Department of Materials Physics, Nagoya University, Nagoya 464-8603, Japan

2. Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8601, Japan

3. High Field Laboratory for Superconducting Materials, Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

4. Research Center for Crystalline Materials Engineering, Nagoya University, Nagoya 464-8603, Japan

Funder

Japan Society for the Promotion of Science

Publisher

Physical Society of Japan

Subject

General Physics and Astronomy

Link

https://journals.jps.jp/doi/pdf/10.7566/JPSJ.93.014705

Reference46 articles.

1. Charge-Density Waves in Metallic, Layered, Transition-Metal Dichalcogenides

2. Charge-density waves and superlattices in the metallic layered transition metal dichalcogenides

3. Superconductivity and electronic properties of layered compounds

4. From Mott state to superconductivity in 1T-TaS2

5. Large, non-saturating magnetoresistance in WTe2

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