Quantum Dipole Effects in a Silicon Transistor under High Electric Fields

Author:

Saito Shinichi1ORCID,Li Zuo1,Yoshimoto Hiroyuki2,Tomita Isao13,Tsuchiya Yoshishige4,Sasago Yoshitaka5,Arimoto Hideo15,Liu Fayong1,Husain Muhammad Khaled1,Hisamoto Digh5,Rutt Harvey N.1,Kurihara Susumu2

Affiliation:

1. Sustainable Electronic Technologies, Electronics and Computer Science, Faculty of Physical Sciences and Engineering, University of Southampton, SO17 1BJ, U.K.

2. Department of Physics, Waseda University, Shinjuku, Tokyo 169-8555, Japan

3. Department of Electrical and Computer Engineering, National Institute of Technology, Gifu College, Motosu, Gifu 501-0495, Japan

4. Smart Electronic Materials and Systems, Electronics and Computer Science, Faculty of Physical Sciences and Engineering, University of Southampton, SO17 1BJ, U.K.

5. Research & Development Group, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan

Funder

Engineering and Physical Sciences Research Council

Seventh Framework Programme

Horizon 2020

Publisher

Japan Society of Applied Physics

Subject

General Physics and Astronomy

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