de Haas–van Alphen Effect and Fermi Surface Properties in Single-Crystalline ThCu2Si2-Reference-Cited by-同舟云学术

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de Haas–van Alphen Effect and Fermi Surface Properties in Single-Crystalline ThCu2Si2

Published:2020-09-15 Issue:9 Volume:89 Page:094703
ISSN:0031-9015
Container-title:Journal of the Physical Society of Japan
language:en
Short-container-title:J. Phys. Soc. Jpn.

Author:

Nakamura Ai¹,Honda Fuminori¹,Homma Yoshiya¹,Li Dexin¹,Shimizu Yusei¹,Maurya Arvind¹,Sato Yoshiki J.²,Harima Hisatomo³,Ōnuki Yoshichika⁴,Aoki Dai¹

Affiliation:

1. Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313, Japan

2. Graduate School of Engineering, Tohoku University, Sendai 980-8577, Japan

3. Graduate School of Science, Kobe University, Kobe 657-8501, Japan

4. Faculty of Science, University of the Ryukyus, Nishihara, Okinawa 903-0213, Japan

Publisher

Physical Society of Japan

Subject

General Physics and Astronomy

Link

https://journals.jps.jp/doi/pdf/10.7566/JPSJ.89.094703

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Single-Crystal Growth and Fermi Surface Properties of LaPd₂Si₂: Comparison with Pressure-Induced Heavy-Fermion Superconductor CePd₂Si₂;Journal of the Physical Society of Japan;2022-11-15

2. Quantum oscillations and physical properties of LaCu₂Si₂;Canadian Journal of Physics;2022-04

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