Doping Effects on the Electronic Structure of an Anisotropic Kondo Semiconductor CeOs2Al10: An Optical Study with Re and Ir Substitution-Reference-Cited by-同舟云学术

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Doping Effects on the Electronic Structure of an Anisotropic Kondo Semiconductor CeOs2Al10: An Optical Study with Re and Ir Substitution

Published:2016-12-15 Issue:12 Volume:85 Page:123705
ISSN:0031-9015
Container-title:Journal of the Physical Society of Japan
language:en
Short-container-title:J. Phys. Soc. Jpn.

Author:

Kimura Shin-ichi¹²,Takao Hitoshi²,Kawabata Jo³,Yamada Yoshihiro³,Takabatake Toshiro³⁴

Affiliation:

1. Graduate School of Frontier Biosciences, Osaka University, Suita, Osaka 565-0871, Japan

2. Department of Physics, Osaka University, Toyonaka, Osaka 560-0043, Japan

3. Department of Quantum Matter, ADSM, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

4. Institute for Advanced Materials Research, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

Publisher

Physical Society of Japan

Subject

General Physics and Astronomy

Link

http://journals.jps.jp/doi/pdf/10.7566/JPSJ.85.123705

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical evidence of local and itinerant states in Ce- and Yb-heavy-fermion compounds;Electronic Structure;2021-06-01

2. Interplay between hybridisation gaps and unusual magnetic orders in Kondo semiconductors CeT2Al10 (T = Ru and Os);Philosophical Magazine;2019-07-31

3. Different Variations of Néel Temperature TN and Kondo Temperature TK in the Alloy System Ce(Ru1−xOsx)2Al10 under Uniaxial Pressure;Journal of the Physical Society of Japan;2018-05-15

4. Fe Substitution Effect on the High-Field Magnetization in the Kondo Semiconductor CeRu2Al10;Journal of the Physical Society of Japan;2017-02-15

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