Low-Temperature Carrier Transport in Ionic-Liquid-Gated Hydrogen-Terminated Silicon-Reference-Cited by-同舟云学术

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Low-Temperature Carrier Transport in Ionic-Liquid-Gated Hydrogen-Terminated Silicon

Published:2017-11-15 Issue:11 Volume:86 Page:114703
ISSN:0031-9015
Container-title:Journal of the Physical Society of Japan
language:en
Short-container-title:J. Phys. Soc. Jpn.

Author:

Sasama Yosuke¹²,Yamaguchi Takahide¹²,Tanaka Masashi¹³,Takeya Hiroyuki¹,Takano Yoshihiko¹²

Affiliation:

1. WPI-MANA, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan

2. Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan

3. Graduate School of Engineering, Kyushu Institute of Technology, Kitakyushu 804-8550, Japan

Publisher

Physical Society of Japan

Subject

General Physics and Astronomy

Link

http://journals.jps.jp/doi/pdf/10.7566/JPSJ.86.114703

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Maskless Patterning of Gallium-Irradiated Superconducting Silicon Using Focused Ion Beam;ACS Applied Electronic Materials;2020-02-07

2. Ionic-liquid-gating setup for stable measurements and reduced electronic inhomogeneity at low temperatures;Review of Scientific Instruments;2018-10

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