Determination of Phase Diagram of Electron–Hole Systems in 4H-SiC-Reference-Cited by-同舟云学术

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Determination of Phase Diagram of Electron–Hole Systems in 4H-SiC

Published:2013-06-15 Issue:6 Volume:82 Page:063703
ISSN:0031-9015
Container-title:Journal of the Physical Society of Japan
language:en
Short-container-title:J. Phys. Soc. Jpn.

Author:

Hirano Daisuke¹,Kimoto Tsunenobu²³,Kanemitsu Yoshihiko¹³

Affiliation:

1. Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan

2. Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan

3. Photonics and Electronics Science and Engineering Center, Kyoto University, Kyoto 615-8510, Japan

Publisher

Physical Society of Japan

Subject

General Physics and Astronomy

Link

http://journals.jps.jp/doi/pdf/10.7566/JPSJ.82.063703

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced radiative recombination rate for electron-hole droplets in a silicon photonic crystal nanocavity;Physical Review B;2017-07-10

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