Author:
Milenin G.V., ,Redko R.A., ,
Abstract
The phenomenon of directed motion of mobile charged point defects in semiconductor structures under action of magnetic fields has been discussed. The features of defect drift in sign-changing magnetic fields have been studied. The effect of directional movement of charged defects under the combined action of constant and alternating magnetic fields has been analyzed. Analytical relations have been presented for the drift rate of defects in semiconductor structures under given impacts.
Publisher
National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka) (Publications)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
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