Author:
Ievtushenko A.I., ,Karpyna V.A.,Bykov O.I.,Dranchuk M.V.,Kolomys O.F.,Maziar D.M.,Strelchuk V.V.,Starik S.P.,Baturin V.A.,Karpenko О.Y.,Lytvyn O.S., , , , , , , , , ,
Abstract
Vanadium oxide (VO x ) thin films are promising materials, exhibiting electrical, optical, and mechanical properties highly tunable by processing and structure. This work uniquely applying atomic force microscopy (AFM) nanoindentation correlated with X-ray diffractometry and Raman spectroscopy structural analysis to investigate the intricate connections between VO x post-annealing, phase composition, and resulting nanoscale mechanical functionality. Utilizing an ultra-sharp diamond tip as a nanoscale indenter, indentation is performed on VO x films with systematic variations in structure – from mixed insulating oxides to VO 2 -dominated films. Analytical modeling enables extraction of hardness and elastic modulus with nanoscale resolution. Dramatic mechanical property variations are observed between compositions, with order-of-magnitude increases in hardness and elastic modulus for the VO 2 -rich films versus insulating oxides. Ion implantation further enhances nanomechanical performance through targeted defect engineering. Correlating indentation-derived trends with detailed structural and morphological characterization elucidates explicit structure-property relationships inaccessible by other techniques. The approach provides critical mechanics-driven insights into links between VO x synthesis, structure evolution, and property development. Broader implementation will accelerate processing optimization for electronics and advanced fundamental understanding of nanoscale structure-functionality relationships
Publisher
National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka) (Publications)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Analysis of interface states in Zn/p-NiO Schottky barrier diode;Journal of Materials Science: Materials in Electronics;2024-07-31
2. Metal oxides for electronics and the SPQEO journal;Semiconductor Physics, Quantum Electronics and Optoelectronics;2024-06-21
3. Science in 2025-2027 and the SPQEO journal;Semiconductor Physics, Quantum Electronics and Optoelectronics;2024-03-12