Author:
Neimash V. B.,Nikolenko A. S.,Strelchuk V. V.,Shepelyavyi P. Ye.,Litvinchuk P. M.,Melnyk V. V.,Olkhovyk I. V.
Abstract
The influence of the laser light intensity and the temperature on the tin-induced crystallization of amorphous silicon has been studied using the Raman screening and optical microscopy methods. The existence of non-thermal mechanisms giving rise to the influence of laser light on the formation of silicon nanocrystals and their Raman spectra is demonstrated experimentally. The photoionization of silicon and the electron-phonon interaction are considered as possible origins of the detected effects. The prospects of their application in new technologies for producing nano-silicon films used in solar cells are discussed.
Publisher
National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)
Subject
General Physics and Astronomy
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献