Author:
Uteniyazov A.K., ,Leyderman A.Yu.,Ayukhanov R.A.,Esenbaeva E.S.,Gafurova M.V., , , ,
Abstract
The results of studies of the current-voltage characteristics of the Al–Al2O3–p-CdTe–Mo structure in the forward direction of the current in the dark and under light illumination have been presented. These characteristics have four sections of the power-law dependence of the current on the voltage in the form J ~ Vα. It has been shown that the Al–Al2O3–p-CdTe–Mo structure can be considered as a n+-p diode structure with a long base, in which the current transport processes are described by the drift model of ohmic relaxation under conditions of non-equilibrium carriers recombination occurring through a pair two-level recombination complex.
Publisher
National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Cited by
4 articles.
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