Anti-reflection coatings based on SnO2, SiO2, Si3N4 films for photodiodes operating in ultraviolet and visible spectral ranges-Reference-Cited by-同舟云学术

Anti-reflection coatings based on SnO2, SiO2, Si3N4 films for photodiodes operating in ultraviolet and visible spectral ranges

Published:2011-09-25 Issue:3 Volume:14 Page:298-301
ISSN:1560-8034
Container-title:Semiconductor Physics Quantum Electronics and Optoelectronics
language:
Short-container-title:Semicond. Phys. Quantum Electron. Optoelectron.

Author:

Dobrovolskiy Yu. G.,

Publisher

National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference5 articles.

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2. Schottky barrier near-ultraviolet photodetectors based on ZnSe.;Bouhdada;Active and Passive Electronic Device,2005

3. Research of ultraviolet radiation of eritem and bactericidal spectral ranges by using photodiodes based on gallium phosphide and zinc selenide.;Perevertailo,2009

4. Photodetector of ultraviolet radiation based on gallium phosphide.;Biksey;Appl Phys (Berl ),2005

5. The use of dissymmetric detector of type scintillator-photodiode in the photoncounting mode.;Danilishin;Приборы и техн эксперим,1991

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