“Slow” surface levels and relaxation of photoconductivity in the structures of macroporous silicon in the violet range of the optical spectrum-Reference-Cited by-同舟云学术

“Slow” surface levels and relaxation of photoconductivity in the structures of macroporous silicon in the violet range of the optical spectrum

Published:2017-12-15 Issue: Volume:52 Page:135-140
ISSN:1011-6559
Container-title:Optoèlektronika i poluprovodnikovaâ tehnika
language:
Short-container-title:Optoelektron. napìvprovìd. teh.

Author:

Karas’ N.I.,

Publisher

National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)

Reference8 articles.

1. 1. Karas N.I. Otricatelnaya fotoprovodimost v strukturah makroporistogo kremniya. Novi tehnologiyi. 2010. №1. S. 118-123. (in Russian)

2. 2. Gorshkov A.P., Tihov S.V. Fizika poverhnosti poluprovodnikov. Nizhnij Novgorod: Izd-vo Nizhegorodskogo gos. universiteta, 2013. (in Russian)

3. 3. Peka G.P. Fizika poverhnosti poluprovodnikov. K.: Izd-vo Kievskogo universiteta, 1967. (in Russian)

4. 4. Skvorcov A.M., Trifonova T.A., Huin Kong Tu. Mikrostrukturirovanie monokristallov kremniya volokonnym lazerom v rezhime vysokoskorostnogo skanirovaniya. Nauchno-tehnicheskij vestnik informacionnyh tehnologij, mehaniki i optiki. 2015. 15, №6. S. 1062-1071. (in Russian)

5. 5. Green M.A. High Efficiency Silicon Solar Cells. Switzeland, Trans. Tech. Publ., 1987.

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2. MONOPOLAR PHOTOCONDUCTIVITY OF THE INVERSION LAYER AND “SLOW”-SURFACE LEVELS IN THE STRUCTURES OF MACROPOROUS AND MONOCRYSTALLINE SILICON IN CONDITIONS OF STRONG SURFACE LIGHTNING;Optoèlektronika i poluprovodnikovaâ tehnika;2018-12-15