Publisher
National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)
Reference11 articles.
1. 1. Gajdar G.P., Baranskij P.I., Kolomoyec V.V. Tenzoopir bagatodolinnih napivprovidnikiv n-Si ta n-Ge v shirokomu intervali koncentracij. Fizika i himiya tverdogo tila. 2014. 15, № 1. S. 58-62. (in Ukrainian)
2. 2. Budzulyak S.I. Tenzorezistivni efekti v silno deformovanih kristalah n-Si ta n-Ge. Fizika i himiya tverdogo tila. 2012. 13, № 1. S. 34-39. (in Ukrainian)
3. 3. Smith Ch.S. Piezoresistance effect in germanium and silicon. Phys. Rev. 1954. 94, No. 1. Р. 42-49.
4. 4. Herring C. Transport properties of a many-valley semiconductor. Bell System Tech. J. 1955. 34, No. 2. P. 237-290.
5. 5. Baranskii P.I., Buda I.S., Dakhovskii I.V., Kolomoets V.V. Piezoresistance and magnetopiezoresistance of n-Ge in the [110] direction. phys. status solidi (b). 1971. 46, No. 2. P. 791-796.