Diffusion and mobility of native point defects in narrow-gap Hg1-xCdxTe crystals-Reference-Cited by-同舟云学术

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Diffusion and mobility of native point defects in narrow-gap Hg1-xCdxTe crystals

Published:2003-03-18 Issue:1 Volume:6 Page:47-52
ISSN:1560-8034
Container-title:Semiconductor Physics, Quantum Electronics and Optoelectronics
language:
Short-container-title:Semicond. Phys. Quantum Electron. Optoelectron.

Author:

Bogoboyashchyy V.V.,

Publisher

National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. 1. A. Rogalski, Infrared detectors, Gordon and Breach Science Publishers, The Netherlands (2000).

2. 2. D. Shaw and P. Capper, Conductivity type conversion in Hg1-xCdxTe // J. Mater. Sci.: Materials in Electronics11, pp.169-177 (2000).

3. 3. H.R. Vydyanath, Lattice defects in semiconducting Hg1-xCdxTe alloys. P. I. Defect structure of undoped and copper doped Hg0.8Cd0.2Te // J. Electrochem. Soc.: Solid-State Sci. and Technol. 128(12), pp. 2609-2629 (1981).

4. 4. H.F. Schaake, The existence region of the Hg1-xCdxTe phase field // J. Electron. Mater. 14(5), pp. 513-530 (1985).

5. 5. H.R. Vydyanath and C.H. Hiner, Anneling behavior of undoped Hg0.8Cd0.2Te epitaxial films at low temperatures // J. Appl. Phys. 65(8), pp. 3080-3088 (1989).

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1. Diffusion in MCT;Mercury Cadmium Telluride;2010-09-04

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