Relaxation and thermoinduced processes in glassy HgSe(x)-GeSe2(1-x) alloys-Reference-Cited by-同舟云学术

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Relaxation and thermoinduced processes in glassy HgSe(x)-GeSe2(1-x) alloys

Published:2003-03-18 Issue:1 Volume:6 Page:73-75
ISSN:1560-8034
Container-title:Semiconductor Physics, Quantum Electronics and Optoelectronics
language:
Short-container-title:Semicond. Phys. Quantum Electron. Optoelectron.

Author:

Halyan V.V.,

Publisher

National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. 1. S. Motrya, Yu. Voroshilov, M. Potoriy et al. Ukr. Chem. J.52(1986) 807.

2. 2. Yu. Voroshilov, S. Motrya, E. Semrad. Ukr. Chem. J.60 (1994)128.

3. 3. I.D.Olekseyuk, V.V.Bozhko, O.V.Parasyuk, V.V.Halyan, I.I.Petrys'. Functional materials. 6, (1999) 550.

4. 4. Electron phenomena in chalcogenide glassy semiconductors.Nauka, Saint-Petersburg, 1996, 486 p.

5. 5. S. Abe, Yu. Toyozava. Density of the electron states and absorption edge in amorphous semiconductors. In: Amorphous semiconductors and devices based on them.Metallurgy,Moscow, 1986, 376 p.

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1. Annealing effect on the luminescence properties of BaZrO3:Yb3+ microcrystals;Journal of Applied Physics;2008-07-15

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