Investigation of some mechanisms for formation of exciton absorption bands in layered semiconductor n-InSe and p-GaSe crystals

Author:

Zhirko Yu.I.,

Publisher

National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. 1. Yu.I. Zhirko, Investigation of the light absorption mechanisms near exciton resonance in layered crystals. N= 1 state exciton absorption in InSe // phys. stat. sol. (b)213, pp. 93-106 (1999).

2. 2. Yu.I. Zhirko, Investigation of the light absorption mechanisms near exciton resonance in layered crystals. Part 2. N=1 state exciton absorption in GaSe // phys. stat. sol. (b)219,pp. 47-61 (2000).

3. 3. A.S. Davydov, A.A. Serikov, Quantum-statistical theory of light propagation in crystals // phys. stat. sol. (b). 56, pp. 351-363 (1973).

4. 4. L.N. Kurbatov, A.I. Dirochka, V.A. Sosin, Effect of exciton polaritons on the GaTe absorption edge. I. Temperature dependence of absorption // Fiz. Tekh. Poluprov. 13(1), pp. 75-82 (1979) (in Russian)

5. L.N. Kurbatov, A.I. Dirochka, V.A. Sosin, Effect of exciton polaritons on the GaTe absorption edge. II. Dependence of absorption on sample thickness // Fiz. Tekh. Poluprov.13(1), pp. 83-88 (1979) (in Russian).

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