New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures
Author:
Publisher
National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Effect of magnetic field on hysteretic characteristics of silicon diodes under conditions of low-temperature impurity breakdown
2. Silicon diode temperature sensor without a kink of the response curve in cryogenic temperature region
3. Revealing the hopping mechanism of conduction in heavily doped silicon diodes. Semiconductor Physics;Borblik;Quantum Electronics & Optoelectronics,2005
4. Manifestation of disorder effects in the excess tunnel current of heavily doped silicon diodes
5. Characteristics of diode temperature sensors which exhibit Mott conduction in low-temperature region. Semiconductor Physics;Borblik;Quantum Electronics & Optoelectronics,2007
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