Author:
Romaka V.V.,Stadnyk Yu.V.,Rogl P.F.,Romaka L.P.,Krayovskyy V.Ya.,Horpenyuk A.Ya.,Horyn A.M.
Abstract
Crystal and electronic structure, transport and energy state characteristics of the Zr1−xVx NiSn (0.01 ≤ x ≤ 0.1) thermoelectric material are investigated in the 80–400 K temperature interval. A mechanism of simultaneous generation of structural defects of the acceptor and donor nature, which determines the electric conductivity of the material, is established. It is shown that energetically expedient is a simultaneous occupation of the 4c position of Ni (3d84s2) atoms by V (3d34s2) atoms, which generates structural defects of the acceptor nature and the impurity acceptor band Ꜫ1A, as well as the 4a position of Zr (4d25s2) atoms, generating structural defects of the donor nature and the impurity donor band Ꜫ2D.
Publisher
National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)
Subject
General Physics and Astronomy
Reference16 articles.
1. 1. V.A. Romaka, V.V. Romaka, Yu.V. Stadnyk. Intermetallic Semiconductors: Properties and Applications (Lvivska Polytechnika, 2011) [ISBN: 978-617-607-053-5] (in Ukrainian).
2. 2. V.V. Romaka, P.-F. Rogl, R. Carlini, C. Fanciulli. Prediction of the thermoelectric properties of half-heusler phases from the density functional theory. In: Alloys and Intermetallic Compounds. Ed. by C. Artini (Taylor and Francis Group, 2017) [ISBN: 978-1-4987-4143-9].
3. 3. L.I. Anatychuk. Thermoelements and Thermoelectric Devices (Naukova Dumka, 1979).
4. 4. B.I. Shklovsky, A.L. Efros. Electronic Properties of Doped Semiconductors (Springer, 1984).
5. 5. V.A. Romaka, D. Fruchart, Yu.V. Stadnyk, J. Tobola, Yu.K. Gorelenko, M.G. Shelyapina, L.P. Romaka, V.F. Chekurin. Conditions for attaining the maximum values of thermoelectric power in intermetallic semiconductors of the MgAgAs structural type. Semiconductors 40, 1275 (2006).
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献