Abstract
A photo-emf in the NbN–GaAs Schottky contact samples studied. This photo-emf is generated along the metalsemiconductor interface. It is shown that a semiconductor transition layer formed near the Schottky contact interface has a pronounced effect on the form of spectral characteristics. The feature of the photoemf spectral characteristics is a variations its appearance when changing the thermal annealing temperature of the studied heterosystems. If the spectral characteristic has one maximum and amplitude, which several times exceeds the amplitude of a significant characteristic, which means the formation of a transition layer in the Schottky contact depletion area with high conductivity, compared with a quasine-neutral region of a semiconductor. A complicated alternating form of spectral characteristics of the photo-emf is related to contributions to the measured signal from several components that are generated at potential barriers of the metalsemiconductor heterosystem. Illumination of samples on the metal side results in change of the form of spectral characteristics and reversal of sign of photo-emf. This is caused by variation of interrelation between the photo-emf components that are generated in the heterosystem layers with different conductivities. For the samples annealed at Т = 900 С, the photo-emf changes its sign near the GaAs absorption edge. It was found that thermal annealing at Т = 950 С results in increase of relative nonuniformity of the depletion region thickness, while the sign of the photo-emf spectral curve does not change. In this case, considerable effect of band bending nonuniformity in the depletion region of the heterosystem under investigation on the character of lateral photo-emf distribution is retained.
Publisher
National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka) (Publications)
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