Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing-Reference-Cited by-同舟云学术

Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing

Published:2009-10-30 Issue:4 Volume:12 Page:412-416
ISSN:1560-8034
Container-title:Semiconductor physics, quantum electronics and optoelectronics
language:
Short-container-title:Semicond. phys. quantum electron. optoelectron.

Author:

Prokopiv V. V., ,

Publisher

National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference27 articles.

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3. 3. V.М. Glazov, L.М. Pavlova, Homogeneity region in the system based on cadmium telluride // Neorganicheskiye materialy 30(5), p. 629-634 (1994), in Russian.

4. 4. P. Fochuk, O. Korovyanko, O. Panchuk, High-temperature point defect equilibrium in CdTe modelling // J. Cryst. Growth 197, p. 603-606 (1999).

5. 5. P.М. Fochuk, О.О. Коrоvyanko, О.Е. Panchuk, Calculation of incorporation constants for doping elements in CdTe // Physics and chemistry of solid state 2(3), p. 475-480 (2001), in Ukrainian.

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