Publisher
National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. 1. O.Ya. Olikh and I.V. Ostrovsky, Increase of electron diffusion length in p-Si crystals under ultrasound action // Fizika tverdogo tela 44 (7), p. 1198-1202 (2002), in Russian.
2. 2. A.A. Podolyan, V.I. Khivrych, Ultrasound influence on the radiation defects treatment in silicon at the room temperatures // Technical Physics Letters 31 (10), p. 11-16 (2005), in Russian.
3. 3. A.P. Onanko, A.A. Podolyan, I.V. Ostrovsky, Ultrasound treatment influence on the internal friction in silicon // Technical Physics Letters 29 (15), p. 40-44 (2003), in Russian.
4. 4. Ya.M. Olikh, N.D. Timochko, A.P. Dolgolenko, Acoustic-wave-stimulated transformations of radiation defects in γ-irradiated n-type silicon crystals // Technical Physics Letters 32 (13), p. 67- 73 (2006), in Russian.
5. 5. V.M. Babych, O.P. Dolgolenko, Ya.M. Olikh, M.D. Tymochko, Ultrasound influence on the electrical activity of radiation defects in γ-irradiated n-type silicon crystals // Nuclear Physics and Atomic Energy 1 (19), p. 95-102 (2007), in Ukrainian.
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献