1. 1. G.B. Dubrovskii, E.I. Radovanova. Optical absorption in the 0.6 mm region and conduction band structure in a(6H)-SiC // Fiz. Tverd. Tela - 1969 - v.11, No 3 - P.680-684 (in Russian).
2. 2. I.S. Gorban, V.P. Zavada, A.S. Skirda. Photoionization spectra of impurity centers in a-SiC(6H) at high temperatures // Fiz. Tverd. Tela - 1972 - v.14 - P.3095-3097 (in Russian).
3. 3. I.S. Gorban, A.S. Skirda. Absorption spectra of nitrogen impurity in different a-SiC polytypes // Ukrainskii Fiz. Zhurn. - 1981 - v.26, No 2 - P.228-232 (in Russian).
4. 4. I.S. Gorban, A.P. Krokhmal. Impurity optical absorption and conduction band structure in 6H-SiC // Fiz. Tekh. Poluprov. - 2001 - v.35, No 11 - P.1299-1305 (in Russian).
5. 5. V.V. Antipin, V.A. Godovitsyn, D.V. Gromov, A.S. Kozhevnikov, A.A. Ravaev. Effect of high-power pulsed microwave disturbances on semiconductor devices and integrated microcircuits // Zarubezhnaya Radioelektronika-1995 - No 1 - P.37-53 (in Russian).