Publisher
National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference23 articles.
1. 1. N. Sclar, D. B. Pollock // Sol. St. Electr., 15, p.473 (1972).
2. 2. S. P. Logvinenko, T. D. Aluf, T. M. Zarochintseva. Thermometrical characteristics of directly biased Ge, Si and GaAs diodes in the range of 4.2-300 K// Kriogennaya i vakuumnaya tekhnika, ser. 2, p.63 (1972) (in Russian).
3. 3. L. Jansak, P. Kordos, M. Blahova. Silicon and gallium arsenide for low-temperature thermometry// Inst. Phys. Conf. 1975, Ser. 26, Chap. N 2, p. 65-69.
4. 4. I. Chopra, G. Dharmadurai. Effect of current on the low temperature characteristics of diode sensors // Cryogenics, 20, p.659 (1980).
5. 5. W. Shockley. The theory of pn-junction in semiconductors and pn-junction transistors// Bell System Techn. J., 28, p.435 (1949).
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