1. 1. Gaidar, G.P. (2015). The Kinetics of Electronic Processes in Si and Ge in the Fields of External Influences. Saarbrücken: LAP LAMBERT Academic Publishing (in Russian).
2. 2. Gotra, Z.Yu. (1991). Technology of Microelectronic Devices. Handbook. Moscow: Radio i svyaz' (in Rus sian).
3. 3. Baranskii, P.I., Fedosov, A.V. & Gaidar, G.P. (2007). Heterogeneities of Semiconductors and Urgent Problems of the Interdefect Interaction in the Radiation Physics and Nanotechnology. Kiev—Lutsk: Lutsk State Technical Univ. (in Ukrainian).
4. 4. Shklovskiy, B.I. & Efros, A.L. (1979). Electronic Properties of Doped Semiconductors. Moscow: Nauka (in Russian).
5. 5. Fistul', V.I. (2004). Atoms of Alloying Impurities in Semiconductors (State and Behaviour). Moscow: Publishing house of physical and mathematical literature (in Russian).