Publisher
National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. 1. J. B. Casady, R. W. Johnson, Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review // Solid State Electronics 39, pp. 1409-1422 (1996).
2. 2. D. Kurangam, T. Endo, M. Deguchi, W. Guang-Pu, H.Okamoto and Y. Hamakawa, Amorphous silicon carbide thin film emitting diode // Optoelectronics 1, pp. 67-84 (1986).
3. 3. V. S. Lysenko, I. P. Tyagulski, Y. V. Gomeniuk, I. N. Osiyuk and I. I. Tkach, Thermally stimulated characterization of shallow traps in the SiC/Si heterojunction // Journ. of Phys.D: Applied Physics 31, pp. 1499-1503 (1998).
4. 4. H. Chaabane, J. C. Bourgoin, Irradiation effect on electron transport through GaAlAs barriers // Applied Phys. Letters 64(8), pp. 1006-1008 (1994).
5. 5. H. Chaabane, J. C. Bourgoin, Role of defects on electron transport through semiconductor barriers // J.Appl.Phys.76(1), pp. 315-318 (1994).
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