On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n + -n doping step-Reference-Cited by-同舟云学术

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On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n + -n doping step

Published:2014-03-31 Issue:1 Volume:17 Page:1-6
ISSN:1560-8034
Container-title:Semiconductor Physics Quantum Electronics and Optoelectronics
language:
Short-container-title:Semicond. Phys. Quantum Electron. Optoelectron.

Author:

Sachenko A.V.,

Publisher

National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Mechanisms of current flow in metal-semiconductor ohmic contacts

2. High-Temperature Characteristics of Ti/Al/Ni/Au Ohmic Contacts to n-GaN

3. Flow of the current along metallic shunts in ohmic contacts to wide-gap III–V semiconductors

4. Temperature dependence of contact resistance of Au-Ti-Pd 2 Si-n + -Si ohmic contacts. Semiconductor Physics;Belyaev;Quantum Electronics and Optoelectronics,2010

5. Temperature dependence of contact resistance for Au-Ti-Pd2Si-n +-Si ohmic contacts subjected to microwave irradiation

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Method for data processing in application to ohmic contacts;Semiconductor Physics, Quantum Electronics & Optoelectronics;2019-03-30

2. On the ohmicity of Schottky contacts;Semiconductors;2016-06

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