New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis

Author:

Arsentyev I. N., ,

Publisher

National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. 1. A.S. Tager, Prospects of indium phosphide application in the semiconductor microwave electronics, in Indium phosphide application in semiconductor electronics, Ed. S.I. Radautsan, p. 120-132, Shtiintsa, Kishinev (1988) (in Russian).

2. 2. G.S. Korotchenkov, I.P. Molodyan, Schottky barriers, intrinsic oxides, and MOS structures on indium phosphide. Shtiintsa, Kishinev (1984) (in Russian).

3. 3. E.F. Venger, R.V. Konakova, G.S. Korotchenkov, V.V. Milenin, E.V. Russu, I.V. Prokopenko, Interactions between phases and degradation mechanisms in metal−InP and metal−GaAs structures. Information-Editing Dept. of ISP NASU, Kiev (1999) (in Russian).

4. 4. V.G. Bozhkov, V.S. Lukash, Semiconductor micro-wave devices // Vestnik Tomskogo Gosudarstvennogo Universiteta, Ser. Fizika No 285, p. 129-138 (2005) (in Russian).

5. 5. V.G. Bozhkov, Semiconductor detectors, mixers, and frequency multipliers for terahertz range // Izvestiya Vuzov. Radiofizika 46(8-9), p. 702-731 (2003) (in Russian).

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Ohmic contacts based on Pd to indium phosphide Gunn diodes;Semiconductor Physics Quantum Electronics and Optoelectronics;2015-09-30

2. Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures;Semiconductor physics, quantum electronics and optoelectronics;2008-09-15

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