Investigation of the effect of external factors (heating, exposition to radiation) on the electrophysical parameters of barrier heterostructures p-AlGaAs–p-GaAs

Investigation of the effect of external factors (heating, exposition to radiation) on the electrophysical parameters of barrier heterostructures p-AlGaAs–p-GaAs–n-GaAs

Published:2005-05-31 Issue:1 Volume:8 Page:46-52
ISSN:1560-8034
Container-title:Semiconductor physics, quantum electronics and optoelectronics
language:
Short-container-title:Semicond. phys. quantum electron. optoelectron.

Author:

Dmitruk N. L.,

Publisher

National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference5 articles.

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3. 3. V.M. Andreev, in: Y.M. Marshall and D. DimovaMalinovska (Eds.), Photovoltaic and Photoactive Materials-Properties, Technology and Application 80, p.131, Kluwer Acad. Publ., London (2002).

4. 4. V.V. Evstropov, Yu.V. Zhilyaev, M. Jumaeva, and N. Nazarov, Fiz. Tekhn. Poluprov. 31, p. 152 (1997).

5. 5. V.V. Evstropov, M. Jumaeva, Yu.V. Zhilyaev, N. Nazarov, A.A. Sitnikova, and L.M. Fedorov, Fiz. Tekhn. Poluprov. 34, p. 1357 (2000). 6. M.E. Raikh and I.I. Ruzin, Fiz. Tekhn. Poluprov. 19, p. 1217 (1985).

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