Publisher
National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. 1. I.S. Virt, N.N. Grigoryev, A.V. Lyubchenko et al. // Poverkhnost'. Fizika, khimia, mekhanika 4, p. 60-63 (1988) (in Russian).
2. 2. I.I. Izhnin, Temperature stability of the IBM formed CdHgTe p-n structure // Proc. SPIE 3890, p. 519-522 (1998).
3. 3. J. Schmit, Intrinsic carrier concentration of Hg1-xCdxTe as a function of x and T // J. Appl. Phys. 41, No 7, p. 2876-2879 (1970).
4. 4. O.A. Bodnaruk, A.V. Markov, S.E. Ostapov, I.M. Rarenko, A.F. Slonetski, Bandgap and intrinsic carrier concentration in HgCdMnTe and HgCdZnTe // Semiconductors 34, p. 415-417 (2000).
5. 5. N.L. Bazhenov, A.M. Andrukhiv, V.I. IvanovOmskii, Carrier lifetime in ZnCdHgTe: calculation and experiment // Infrared Physics 34, No 4, p. 357- 364 (1993).
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献