Determination of potential distribution in a three-barrier structure

Author:

Yodgorova D. M., , , ,

Publisher

National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. 1. J.I. Alferov, V.M. Andreyev, V.D. Rumyantcev, Tendency and perspective of solar photoenergetics development // Fizika, tekhnika poluprovodnikov 38(8), p. 937-947 (2004) (in Russian).

2. 2. S.V. Averin, Determination of contact characteristics of metal-semiconductor for counter-pintlephotodiode structure // Pis'ma in ZhTF 16(4), p. 49-53 (1990) (in Russian).

3. 3. D.M. Yodgorova, E.N. Yakubov, Detectors of optical signal on a base of Au-nSi-Al and Au-nSi diodes // Tekhnologiya i dizain v elektronnoyapparature No 4, p. 39-42 (2005) (in Russian).

4. 4. A.V. Karimov, Three-barrier photodiode of Karimov. Patent RUz #933 from 15.04.1994.

5. 5. A.V. Karimov, D.M. Yodgorova, K. Vakhobov, A.G. Gaibov, Kh.T. Igamberdiyev, Bilateral-sensitive photodiode structures in gallium arsenide and cadmium sulphite system // J. Eng. Phys. and Thermophys.76(1), p. 167-169 (2003).

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